march 1994 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp31xxf3 (mv) overvoltage protector series tisp3125f3, tisp3150f3, tisp3180f3 medium-voltage dual bidirectional thyristor overvoltage protectors device symbol sl package (top view) p package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 a rated for international surge wave shapes these medium-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. offered in three voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. the high crowbar holding current prevents d.c. latchup as the current subsides. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. how to order d package (top view) description .............................................. ul recognized component device v drm v v (bo) v 3125f3 100 125 3150f3 120 150 3180f3 145 180 waveshape standard i tsp a 2/10 s gr-1089-core 175 8/20 s iec 61000-4-5 120 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection r g t g t g g r 1 2 3 45 6 7 8 specified t terminal ratings require connection of pins 1 and 8. specified r terminal ratings require connection of pins 4 and 5. md1xab 1 2 3 t g r g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier tisp31xxf3 d, small-outline tape and reeled tisp31xxf3dr p, plastic dip tube tisp31xxf3p sl, single-in-line tube tisp31xxf3sl tisp31xxf3dr-s tisp31xxf3p-s tisp31xxf3sl-s insert 1xx value corresponding to protection voltages of 125, 150 and 180 for standard termination finish order as for lead free termination finish order as *r o h s c o m p l i a n t v e r s i o n s a v a i l a b l e
march 1994 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for r and t terminal pair, t a = 25 c (unless otherwise noted) rating symbol value unit r epetitive peak off-state voltage, 0 c < t a < 70 c 3125f3 3150f3 3180f3 v drm 100 120 145 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 350 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 175 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resi stor) 90 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c(see notes 1 and 3) 50 hz, 1 s d package p pac kage sl pa ckage i tsm 4.3 5.7 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s j unction temperature t j -65 to +150 c storag e temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially, the tisp m ust be in thermal equilibrium with 0 c |